| 摘要 |
A method of forming a resist pattern comprises the following steps. A resist is applied on a wafer for subsequent baking the same. Subsequently, the resist-applied wafer is then stored in an atmosphere maintained at a humidity of not less than 80% until the resist-applied wafer is placed in an exposure system for exposure thereof by use of a photo-mask. A development of the exposed resist on the wafer is carried out to form a resist pattern. It is possible to further store the wafer in a clean room before the exposure. The above resist is preferably a chemical sensitizing resist.
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