MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a light oxidation treatment technique for suppressing the oxidation of a high-melting point metal film for constituting one portion of a gate electrode and the diffusion of boron in a p-type polycrystalline silicon film for constituting the other portion of the gate electrode in a CMOSLSI that adopts a polymetallic gate structure and dual gate structure. SOLUTION: The heat treatment for improving the profile of a gate insulation film below the end part of a gate electrode, that is removed by etching by supplying a mixed gas containing hydrogen gas and steam which is synthesized from oxygen gas and the hydrogen gas using a catalyst onto the main surface of a semiconductor wafer 1A, is made under low thermal load conditions where a high-melting point metal film for constituting one section of the gate electrode is essentially not oxidized, and boron in a p-type polycrystalline silicon film for constituting the other portion of the gate electrode is subjected to oxidization under low temperature load conditions where there is no diffusion into a substrate through the gate oxide film.