SEMICONDUCTOR MEMORY AND REGULATOR

摘要

PROBLEM TO BE SOLVED: To achieve a nonvolatile memory device capable of easily rewriting a latch data even with a small current of a memory cell, and operating stable program verification. SOLUTION: A stable program verification operation is achieved by arranging a latch for storing a program data in a column latch for programming of a memory cell and program verification, a circuit for detecting a potential of a bit line, and a latch data resetting circuit, and constituting the device to rewrite the latch data by detecting a decrease in the potential of the bit line and activating the latch reset circuit.