| 摘要 |
1,230,368. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORP. 3 Nov., 1969 [5 Dec., 1968], No. 53794/69. Heading H1K. In a semi-conductor element comprising a body 52 of semi-conductor material which has two major opposed surfaces separated by a bevelled peripheral surface 68, the bevel is a double bevel to improve stress distribution having a first portion 70 forming an included angle # of from 165 to 168 degrees with the top surface 53 and an adjacent second portion 72 forming an included angle # of from 35 to 50 degrees with the bottom surface 74. The second bevelled portion 72 lies adjacent to the metal electrode 54 on which the semi-conductor body is bonded by solder layer 56, and the bevel may be continued in the electrode. The semiconductor material may be germanium, silicon, a III/V material or a II/VI material, and the electrode may be of molybdenum, tantalum, tungsten or iron or alloys of these, preferably with a ratio of diameter to thickness in the range 19 to 21. |
