IMPROVED PROCESS FOR PRODUCTION OF THIN LAYERS OF SEMICONDUCTOR MATERIAL

摘要

Thin layers of semiconductor material having a high degree of surface uniformity are produced by: implantation of deuterium ions into a body of semiconductor material to form a buried region of high stress, the buried region defining a thin outer region of the body; attaching a stiffening carrier to the thin outer region of the semiconductor body; and heating the body at 350-450 degrees C to separate the thin outer region. The separated layer is useful in the production of silicon-on-insulator semiconductor devices, and silicon-on-glass devices for liquid crystal display and microwave applications.