| 摘要 |
<p>A sputtering apparatus having a magnetron unit, wherein the erosion face of a target is divided into a circular inner side region coaxial with the wafer (W) held by a pedestal and an annular outer side region adjacent to the outer periphery of the inner side region and surrounding the inner side region, and the magnetron unit comprises a first sub-unit for generating a magnetic field for controlling the plasma around the inner side region and a sub-unit for generating a magnetic field for controlling the plasma around the outer side region. The sputtered particles from the inner side region have directivity, and therefore a high bottom coverage is achieved. Even if the distance between the target and the wafer is shortened, an in-face uniformity is obtained owing to the sputtered particles from the outer side region.</p> |
