| 摘要 |
In the drift region (4) of a semiconductor element (1), there is an additional doping with material whose conductivity complements the conductivity of the doping of the drift region, where the energy level of the additional dopant material settles in the region of the Fermi energy of the drift region (4). Semiconductor element comprises a body (1) with a first doped cathode zone (2) and a second doped anode zone (3). A doped drift region (4) is formed in the cathode zone (2) and the anode zone (3). In the drift region (4) there is an additional doping with material whose conductivity complements the conductivity of the doping of the drift region, where the energy level of the additional dopant material settles in the region of the Fermi energy of the drift region (4).
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