| 摘要 |
A cold cathode electron-emitting device (1) comprises a Schottky junction (6) between a thin n-type semiconductor layer (5) and a metal electrode (4), and is exposed to a vacuum. A voltage which is positive with respect to the metal electrode (4) is applied to the n-type semiconductor layer (5) so that the Schottky junction (6) becomes reverse biased to a degree that electrons are injected from the metal electrode (4) into the conduction band of the n-type semiconductor layer (5) by tunnelling. After having travelled through the n-type semiconductor layer (5), a part of the electrons still have enough energy to bridge the electron affinity of the n-type semiconductor layer (5) and are injected into the vacuum. The electron affinity, band gap, thickness and impurity concentration of the n-type semiconductor layer (5) are important parameters for the electron emission to be efficient. <IMAGE>
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