发明名称 |
Method for forming trenched polysilicon structure |
摘要 |
A method for forming a trenched polysilicon structure can be applied to a semiconductor device. The method includes steps of: a) providing a polysilicon layer; b) forming a dielectric layer on the polysilicon layer; c) forming a rugged oxide layer on the dielectric layer; d) removing a portion of the dielectric layer which is not covered by the rugged oxide layer for exposing a corresponding portion of the polysilicon layer; e) forming a plurality of microtrenches by etching the corresponding portion of the polysilicon layer; and f) removing the rugged oxide layer and the dielectric layer to obtain the trenched polysilicon structure.
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申请公布号 |
US5989971(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19970926036 |
申请日期 |
1997.09.09 |
申请人 |
MOSEL VITELIC INC. |
发明人 |
TU, TUBY;CHEN, KUANG-CHAO |
分类号 |
H01L21/02;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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