Method and device for detecting end point of plasma treatment, method and device for manufacturing semiconductor device, and semiconductor device

摘要

PCT No. PCT/JP96/03042 Sec. 371 Date Apr. 20, 1998 Sec. 102(e) Date Apr. 20, 1998 PCT Filed Oct. 21, 1996 PCT Pub. No. WO97/15074 PCT Pub. Date Apr. 24, 1997In order to detect the end point of a plasma process stably and at a high precision always without being affected by the fine delineation of a pattern to be processed and an external disturbance, it is constructed such that emission wavelength components 27 of species are taken out of a plasma emission 24 and only a frequency component synchronous with a high-frequency electric power for plasma excitation is extracted by a synchronous detection circuit 30 and so on. Thereby, the progressing status of etching is seized more accurately and a change in signal at an end point becomes clear. As a result, the precision of detection of the end point of a plasma process for a minute aperture pattern is improved.