| 摘要 |
The grid or island structures of opposite conductivity are close together to form PN junctions which together with metal-semiconductor junction regions, function as a merged rectifier. The contact is screened from high field strength. The semiconductor (1) and metal layer (2) form the voltage retaining junction. The semiconductor layer is alternately doped type (2a), starting from the grid structures (5), vertically to the contact. Columns (56) of opposite conductivity are close and doped that, with fully extended space charge zone, the mean space charge concentration of the layer is less than the corresponding lowest value of the columns and adjacent layer (26).
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