Silicon-On-Isolator semiconductor arrangement

摘要

The semiconductor arrangement includes a base layer (1) from semiconductor material formed especially by a substrate, an isolation layer (2) arranged above the base layer (1), and a layer (3, 3') from mono-crystalline silicon arranged above the isolation layer. A layer of a passive material is provided in the area of the border surface area (7) between the isolation layer and the mono-crystalline silicon under formation of bonds between the silicon and the passive material, whereby the bond energy of the bonds between the silicon and the passive material is larger than that of a silicon-hydrogen bond. The passive material may be a halogen and/or nitrogen.