| 摘要 |
<p>A process for removing at least one thin-film layer from a surface of a workpiece pursuant to manufacturing a microelectronic interconnect or component is set forth (10). Generally stated, the process comprises the oxidation of at least a portion of at least one thin-film layer and the etching of the oxidized thin-film layer using an etchant that selectively etches primarily the oxidized thin-film layer.</p> |
