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发明名称
Verfahren zur Herstellung einer Schicht auf einem Halbleiterkörper
摘要
申请公布号
DE69326706(D1)
申请公布日期
1999.11.18
申请号
DE1993626706
申请日期
1993.02.16
申请人
NEC CORP., TOKIO/TOKYO
发明人
SHINOHARA, MASAHIDE
分类号
B05D1/00;G03F7/16;H01L21/027;(IPC1-7):G03F7/16
主分类号
B05D1/00
代理机构
代理人
主权项
地址
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