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发明名称
METHOD FOR FORMING SILICON OXYNITRIDE IN SEMICONDUCTOR DEVICE
摘要
申请公布号
KR100230429(B1)
申请公布日期
1999.11.15
申请号
KR19970028144
申请日期
1997.06.27
申请人
SAMSUNG ELECTRONICS CO, LTD.
发明人
LIM, BAEK-GYUN;KIM, EU-SEOK;YANG, CHANG-JIP;PARK, YOUNG-KYOU
分类号
H01L21/31;H01L21/28;H01L21/314;H01L21/318;H01L29/51;(IPC1-7):H01L21/316;H01L21/336;H01L29/78
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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