发明名称 IMPROVED INTERCONNECTION LAYER IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING MACRO CELL REGIONS AND METHOD OF FORMING THE SAME
摘要 An interconnection layer extends across at least a macro cell region and at least a circuit region other than the macro cell region, the macro cell region and the circuit region being monolithically integrated into a semiconductor device, wherein the interconnection layer in the macro cell region is thinner than the interconnection layer in the circuit region.
申请公布号 KR100230119(B1) 申请公布日期 1999.11.15
申请号 KR19967000017 申请日期 1996.12.18
申请人 NEC CORPORATION 发明人 ODA, NORIAKI
分类号 H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/528;H01L23/532;H01L27/118;(IPC1-7):H01L21/28 主分类号 H01L21/28
代理机构 代理人
主权项
地址