| 摘要 |
PURPOSE:To obtain a semiconductor device appropriate to high-speed switching, without increasing the area of the semiconductor device and by providing simple wiring. CONSTITUTION:p-Type base layers 22, 22' and a biasing resistor layer 26 are made on an n-type silicon substrate 21. n-Type emitter layers 23, 23' are made. An n-type layer 23'' is produced in the layer 26. An oxide film 24 is selectively perforated to provide wiring 25, 25', 25'' to Darlington-connect two transistors to each other. As a result, a pn-junction between the layers 22, 23'' serves as a stored carrier discharging diode. Since carriers stored in the second transistor are rapidly discharged to the base 25 of the first transistor, high-speed switching can be performed. Because the diode, namely, the layer 23'' is located in the resistor layer 26 to connect the base layer 22, 22' to each other, the area of the semiconductor device is decreased. Since the area of a collector-emitter junction is greatly reduced and the diode is bonded and the capacity is decreased, the high-speed switching is enabled. |
