发明名称 Method of fabricating a planar waveguide structure
摘要 Annealing a planar wave guide layer is critical because small structural imperfections lead to optical problems. Chemical vapor deposition of the layer tends to leave gaseous substances bonded to the deposit, which on being driven off by initial annealing warm-ups leave cavities requiring densification. Traditional annealing methods take several hours. This invention proposes a rapid heating of the layer to a temperature below the flow temperature, maintaining this temperature for about 30 to 300 seconds, then rapidly heating up further to a temperature close to or above the flow temperature, maintaining this temperature for about 30 to 300 seconds, then allowing the substrate and layer to cool rapidly to room temperature.
申请公布号 US5979188(A) 申请公布日期 1999.11.09
申请号 US19970880594 申请日期 1997.06.23
申请人 NORTHERN TELECOM LIMITED 发明人 OJHA, SURESHCHANDRA MISHRILAL
分类号 C23C16/56;G02B6/12;G02B6/132;(IPC1-7):C23C16/40 主分类号 C23C16/56
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