| 发明名称 |
Semiconductor device using an SOI substrate |
| 摘要 |
A semiconductor device includes an SOI substrate, trench memory cells including trench capacitors formed in the SOI substrate and a mesa or trench isolation region for isolating the trench memory cells. As a result, the trench memory cells are isolated more completely and soft errors are reduced.
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| 申请公布号 |
US5982005(A) |
申请公布日期 |
1999.11.09 |
| 申请号 |
US19970977030 |
申请日期 |
1997.11.25 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIDAKA, HIDETO;SUMA, KATSUHIRO;TSURUDA, TAKAHIRO |
| 分类号 |
H01L21/8242;H01L21/02;H01L27/108;H01L27/12;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/8242 |
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