| 摘要 |
PURPOSE:To further improve the characteristic of a high frequency MES-FET by forming a structure wherein a part or the whole part of a gate electrode contacts one side of the part having a gradient as compared with the surface, which corresponds to the side surface of a groove bored into the surface of an active layer. CONSTITUTION:Over the part of the side surface of the groove of a GaAs, a resist layer 15 is patterned, a CVD-SiO2 layer 14 is etched with the resist pattern as a mask, and next a thick resin layer 13 is etched with plasma containing O2 as the main constituent gas. The thick resin layer 13 is over-etched, thus being etched larger than the aperture of the CVD-SiO2 layer 14. Then, a CVD-SiO2 layer 12 is wet-etched, and the surface of an N type low resistant GaAs part 2 is exposed. Also at this time, the CVD-SiO2 layer 12 is made equal to the aperture of the thick resin layer 13 or some larger than it in size. An Al 16 is pattern-formed on the surface of the groove of the N type low resistant GaAs by evaporating Al from above in directional property by resistance heating vapor deposition. The thick resin layer 13 is exfoliated, and thus the upper layer including the resin layer is removed. |
