| 摘要 |
PROBLEM TO BE SOLVED: To provide an AlGaInNP base semiconductor light emitting device by which light emitting efficiency can be improved. SOLUTION: An n type GaAs buffer layer 102, an n type (Al0.7 Ga0.3 )0.5 In0.5 P clad layer 103, a non doped (Al0.5 Ga0.5 )0.5 In0.5 LP lower light conductive wave layer 104, a non doped Ga0.5 In0.5 P intermediate layer 105a, a non doped Ga0.6 In0.4 N0.01 P0.99 light emitting layer 106, a non doped Ga0.5 In0.5 P intermediate layer 105b, a non doped (Al0.5 Ga0.5 )0.5 In0.5 P upper light conducting wave layer 107, a p type (Al0.7 Ga0.3 )0.5 In0.5 P clad layer 108, a p type Ga0.5 In0.5 P spike preventing layer 109, and a p type GaAs contact layer 110, are layered in sequence on an n type GaAs substrate 110. |
