发明名称 SIMULATION METHOD IN SEMICONDUCTOR PROCESS
摘要 PROBLEM TO BE SOLVED: To provide quick and proper semiconductor process simulation, to predict area density after resize processing instead of resize processing with a high computer load, and to attain simulation based on accurate position calculation when it is necessary to refer to a mesh. SOLUTION: In this simulation method of a semiconductor process, the information of area density related with a pattern formed by an aligner is introduced by prediction, and simulated (1), the information of the area density of the resized pattern is introduced by prediction TV in approximation from the pattern data of a mask whose pattern should be formed (2), and at the time of blocking the pattern data of the mask whose pattern should be formed, and operating prediction by referring to the blocked mesh (3), when the mesh to be referred to is beyond a unit exposure area, the accurate corresponding position of this mesh to be referred to within the unit exposure area is calculated, and referred to as a virtual mesh so that prediction can be operated.
申请公布号 JPH11307419(A) 申请公布日期 1999.11.05
申请号 JP19980110014 申请日期 1998.04.21
申请人 SONY CORP 发明人 ASHIDA ISAO
分类号 H01L21/027;G06F17/50;H01L21/00;(IPC1-7):H01L21/027 主分类号 H01L21/027
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