发明名称 SELF-DESTRUCTION SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To surely prevent the alteration act of a semiconductor integrated circuit to a memory content. SOLUTION: A capacitor 3, for destruction, in which an electric charge for self-destruction by a destruction circuit 2 is installed integrally with an integrated circuit 1. Normally, the electric charge is stored in the capacitor 3, for destruction, via a connecting terminal 10 from a power-supply source 6 which is separate from it. Then, when the power-supply source 6 is removed in order to alter the memory content of the integrated circuit 1, a control circuit or a control element 4 is operated so as to be changed over according to a voltage across its connecting terminals, and the electric charge of the capacitor 3 for destruction is supplied to the destruction circuit 2 so as to be self-destroyed.</p>
申请公布号 JPH11306786(A) 申请公布日期 1999.11.05
申请号 JP19980110527 申请日期 1998.04.21
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 OGAWA SHIGEO;HENMI MANABU;AOYAMA KAZUO;HIRATA AKIHIKO;OFUJI SHINICHI;UNNO HIDEYUKI;MAEDA MASAHIKO;TAKEDA TADAO;URANO MASAMI
分类号 G11C17/12;G06F12/14;G06F21/06;G06F21/24;G11C16/02;H01L21/822;H01L27/04;(IPC1-7):G11C17/12 主分类号 G11C17/12
代理机构 代理人
主权项
地址