| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor device capable of preventing the release of a protecting film and the disconnection of wiring or the like caused by inert gas generated from an antireflection film. SOLUTION: For a semiconductor device covering a wiring layer (data line 31DL) having a TiNx layer 31C as the antireflection film on the top layer with a protecting film 32, a nitrogen composition ratio (x) of the TiNx layer 31C is adjusted to be less than 1.1. Since the TiNx layer 31C contains nitrogen, while lowering the reflection factor in the surface and maintaining an antireflection function, the generation of nitrogen gas can be decreased. A plasma CVD film, capable of improving information holding characteristics in a nonvolatile storage device, is used for the protecting film 32. |
