| 摘要 |
A double inlay process for forming interconnections employs a single photolithography and etching operation to form aligned openings (59, 64) through two oxide layers (56,60) to a conductive layer (54). A double inlay process for forming interconnections comprises: (a) forming a first oxide layer (56) over a substrate (50) bearing first conductive layers (53,54) such that the oxide layer has high and low raised regions (57) above the conductive layer locations; (b) forming a conformal insulation layer (58) above the oxide layer; (c) removing the insulation layer above the highest raised region to form a first opening (59) which exposes part of the oxide layer; (d) forming a second oxide layer (60) on the insulation layer; (e) patterning the second and first oxide layers to form a second opening (64) which exposes the first opening and one (54) of the conductive layers; and (f) forming a second conductive layer (68) which fills the openings to form a connection with the exposed first conductive layer.
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