| 摘要 |
PROBLEM TO BE SOLVED: To obtain an element having a buried structure by one cycle of crystal growth, by forming a stripe-like mesa to be a light emitting element in the (011) plane on a semiconductor substrate, and laminating at least a light emitting layer, a second and third clad layers, an optical guide layer and a fourth clad layer on the semiconductor substrate. SOLUTION: A first n-type clad layer 105, an optical guide layer, a single quantum well forming layer, a three-layer light emitting layer, and a second clad layer 107 are continuously formed by the org. metal chemical vapor deposition method. When the crystal growth is made on a substrate having a stripe- like mesa to be a light emitting element, a triangular light emitting element is formed and other parts are laminated on the semiconductor layer substrate. This laminate does not grow on the (111) plane of the light emitting element side face, and a buried structure can be formed by one cycle of crystal growth by forming the laminate from the substrate so as to bury the side face of the mesa forming a semiconductor laser. |
