| 摘要 |
<p>PURPOSE:To improve the yield of manufacturing a semiconductor device by forming pickup electrode through oxidation resistant films on the surface of base, emitter and collector diffused layers, thereby eliminating the step of forming contact holes therefor. CONSTITUTION:An N type conductivity type emitter diffused layer 15 is formed on a predetermined region of a base diffused layer 13 in a predetermined diffusion depth from the surface. An oxide film 16 is so formed on the surface of an epitaxial growth layer 12 as to insulate and isolate the base diffused layer 13, the emitter diffused layer 15 and the collector diffused layer 14. Pickup electrodes 18 are formed through oxidation resistant layer 17 having conductivity on the surfaces of the layers 13, 14 and 15. The oxide film 17 is formed of conductive metal (such as W, Mo, V, and Ti) and silicon carbide. Reference numeral 10 in the drawing represents a P-type conductivity type semiconductor substrate, and 11 represents a buried layer.</p> |
