| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency amplifier for microwave and millimeter wave bands which has increased stability and prevents parasitic oscillation, etc., from occurring. SOLUTION: This device consists of a high frequency transistor 1, a bias supplying circuit 10 that comprises a 1st resistor 101 connected to the gate of the high frequency transistor, a 1st distributed constant line 103 which is connected to the other end of the 1st resistance and hasλ/4 electric length and a 2nd distributed constant line 102 which short-circuits the 1st resistor for a required high frequency and supplies a bias to the gate of the transistor 1, a 2nd bias supplying circuit 9 which supplies a bias to the drain of the transistor 1 that is constituted of a 3rd distributed constant line 91 and hasλ/4 electric length, and the other terminal of the lines 103 and 91 are provided with a voltage input terminal.
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