| 摘要 |
PROBLEM TO BE SOLVED: To further improve a driving method for a device, to improve an S/N and to provide a high-quality read image signal improved in picture quality by guaranteeing the photoelectric converted signal reading from a photoelectric converting element to the gate electrode of a field-effect transistor(FET) in the state of forming an inverted layer under the gate of the FET. SOLUTION: When a row selection switch 5 is turned on among respective 2×2 pixels composing a circuit of a photodiode 1, a transfer switch 2, a reset switch 3, a pixel amplifier 4 and a row selection switch 5 in the case of driving a solid-state image pickup device at prescribed driving timing, A source follower circuit composed of a constant load current source 7 and the pixel amplifier 4 is turned into active state and the output of a selected row is generated on a vertical output line 6. This output is stored through a transfer gate 8 into a signal storage part 11. The outputs temporarily stored in the signal storage part 11 are successively read to an output part by a horizontal scanning circuit 12.
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