| 摘要 |
PURPOSE:To obtain the titled resist having a high sensitivity and an excellent anti-dry-etching property by forming the resist from the polymer contg. a methacrylic acid ester derivative having a halogenated alkyl group and sulfur dioxide and a polymer. CONSTITUTION:The titled resist is prepared by mixing the copolymer of the methacrylic acid ester derivative having a halogenated alkyl group and sulfur dioxide as an inhibitor and the polymer of a base. The copolymer of the inhibi tor is shown by the formula wherein RX is a halogenated alkyl group, for example, CHCCl3, R is 1-8C, preferably 1-3C alkyl group, X is Cl, F, Br, I, preferably Cl or F. The polymer of base comprises a phenolic resin and a poly-(hydroxy-alpha-methylstyrene) andis soluble to alkaline solution and has the excellent anti-dry-etching property, and is preferqably poly(P-hydroxy-alpha- methylstyrene). |
