A metal-insulator-metal capacitor for a dynamic random access memory (DRAM) device

摘要

The starting structure includes two gates and a source/drain region on a substrate. A pitted self-align contact window is etched which exposes the source/drain region. Then successively, a barrier/adhesive layer, a lower capacitor electrode, a dielectric film and an upper electrode are formed in the window thereby obtaining a metal-insulator-metal capacitor which has a shape similar to that of the window. An Independent claim is also included for the capacitor structure.