发明名称 Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
摘要 A method and apparatus for multi-zone injection apparatus of multiple process gases onto a work piece during manufacture. The multi-zone injection apparatus uses a gas injection plate with multiple injection zones to deliver the multiple process gases into the chamber for deposition onto the work piece (for example, a silicon wafer). The gas showerhead separates the multiple process in a manner that avoids premixing the process gases, thereby minimizing gas-phase nucleation and particulate generation. The showerhead also allows real-time independent control over the gas flow rates in N channels to achieve deposition uniformity. Different gases can be configured in adjacent channels to provide M zones of multi-gas radial control.
申请公布号 US5976261(A) 申请公布日期 1999.11.02
申请号 US19960678297 申请日期 1996.07.11
申请人 CVC PRODUCTS, INC. 发明人 MOSLEHI, MEHRDAD M.;LEE, YONG JIN;KERMANI, AHMAD
分类号 C23C16/44;C23C16/455;(IPC1-7):C23C16/00 主分类号 C23C16/44
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