发明名称 |
Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment |
摘要 |
A method and apparatus for multi-zone injection apparatus of multiple process gases onto a work piece during manufacture. The multi-zone injection apparatus uses a gas injection plate with multiple injection zones to deliver the multiple process gases into the chamber for deposition onto the work piece (for example, a silicon wafer). The gas showerhead separates the multiple process in a manner that avoids premixing the process gases, thereby minimizing gas-phase nucleation and particulate generation. The showerhead also allows real-time independent control over the gas flow rates in N channels to achieve deposition uniformity. Different gases can be configured in adjacent channels to provide M zones of multi-gas radial control.
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申请公布号 |
US5976261(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19960678297 |
申请日期 |
1996.07.11 |
申请人 |
CVC PRODUCTS, INC. |
发明人 |
MOSLEHI, MEHRDAD M.;LEE, YONG JIN;KERMANI, AHMAD |
分类号 |
C23C16/44;C23C16/455;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
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