| 摘要 |
The present invention is a method to manufacture a reverse crown capacitor. The method includes forming a triple layer silicon oxide/silicon nitride/silicon oxide over a substrate. A first node contact is defined in the triple layer. Spacers of a first node contact are formed. Then, a contact hole in the first node contact is formed to connect to the substrate. A polysilicon layer is deposited to from the plug of the contact hole. A chemical mechanical polishing (CMP) process is performed to remove the silicon nitride layer. Afterwards, a silicon oxide is formed over the substrate. A second node contact is defined and a polysilicon layer is formed on the second node contact to form the bottom plate of a capacitor. Finally, a dielectric film is formed over the bottom plate and a top plate is formed over the dielectric film.
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