发明名称 |
Electrically erasable nonvolatile memory |
摘要 |
A nonvolatile memory cell which is highly scalable includes a cell formed in a triple wall. The control gate is negatively biased. By biasing the P-well and drain (or source) positively within a particular voltage range when erasing, GIDL current and degradation from a hole trapping can be diminished and hence scalable technology may be achieved.
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申请公布号 |
US5978276(A) |
申请公布日期 |
1999.11.02 |
申请号 |
US19980137476 |
申请日期 |
1998.08.20 |
申请人 |
PROGRAMMABLE SILICON SOLUTIONS |
发明人 |
WONG, TING-WAH |
分类号 |
G11C16/04;G11C16/02;G11C16/14;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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