发明名称 Boron ion sources for ion implantation apparatus
摘要 In an efficient ion source BF3 gas is first passed over solid boron heated in an oven to at least 1100 DEG C. to reduce the BF3 to BF molecules. It is also proposed to use solid boron as feed stock by heating this in an oven to at least 1800 DEG C. to produce boron vapour. Either a reactive gas such as fluorine or an inert gas such as Argon is also introduced into the arc chamber to react with or sputter off boron condensing on the arc chamber walls.
申请公布号 US5977552(A) 申请公布日期 1999.11.02
申请号 US19970990323 申请日期 1997.12.11
申请人 APPLIED MATERIALS, INC. 发明人 FOAD, MAJEED A.
分类号 H01J27/04;(IPC1-7):H01J37/317;H01J37/08 主分类号 H01J27/04
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