Semiconductor device having an oxygen-rich punchthrough region extending through the length of the active region

摘要

A semiconductor device having an oxygen-rich punchthrough region under the channel region, and a process for fabricating such a device are disclosed. In accordance with one embodiment, a semiconductor device is formed by forming an oxygen-rich punchthrough region in a substrate, and forming a channel region over the oxygen-rich punchthrough region. The use of an oxygen-rich punchthrough region may, for example, inhibit the diffusion of dopants used in forming the channel region.