SEMICONDUCTOR DYNAMIC RANDOM ACCESS MEMORY CELL FREE FROM LEAKAGE BETWEEN ACCUMULATING ELECTRODE AND COUNTER ELECTRODE,申请号KR19940022430-传众专利搜索

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发明名称	SEMICONDUCTOR DYNAMIC RANDOM ACCESS MEMORY CELL FREE FROM LEAKAGE BETWEEN ACCUMULATING ELECTRODE AND COUNTER ELECTRODE
摘要
申请公布号	KR100228631(B1)	申请公布日期	1999.11.01
申请号	KR19940022430	申请日期	1994.09.07
申请人	NEC CORPORATION	发明人	ANDO, KOICHI
分类号	H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L27/108	主分类号	H01L27/04
代理机构		代理人
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