| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable semiconductor devices to be mounted on a wiring board keeping them high in density and restrained from deteriorating in connection reliability due to a thermal expansion coefficient difference between the semiconductor device and the wiring board when the semiconductor devices are mounted on the wiring board which is different from the semiconductor device in thermal expansion coefficient. SOLUTION: In a ceramic package 1, a semiconductor device 3 is connected on a ceramic board 2 whose periphery is as thick as 0.5 mm or below, and bumps 4 are formed on the periphery of the semiconductor device 3. The ceramic package 1 is mounted on a wiring board through the intermediary of the bumps 4. The ceramic package 1 is connected to the wiring board with the bumps 4, so that the package 1 can be more lessened in mounting area than a prior TSO or a prior QFP. The bumps 4 are formed outside of a semiconductor device mounting surface, the periphery of the ceramic board 2 is set lower than 0.5 mm in thickness, and the ceramic board 2 is set at an intermediate value in thermal expansion coefficient between the semiconductor device 3 and the wiring board, whereby the ceramic package 1 is restrained from deteriorating in connection reliability due to a thermal expansion coefficient difference between the semiconductor device 3 and the wiring board.</p> |
