| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a device, increase the speed and reduce electric consumption, by constituting a first and a second inner circuits of a first and a second MOSFETs having a thick gate insulating film corresponding to a power supply voltage or a boost voltage and a thin gate insulating film corresponding to a drop voltage. SOLUTION: An inner voltage generating circuit forms a drop voltage, boost voltage and a negative voltage, based on a power supply voltage VDD and a grounding voltage VSS, and is operated by the power supply voltage VDD. A memory array and a word driver are operated by the boost voltage VPP for the full light operation of the capacitor charge of a memory cell. A MOSFET which is operated by a relatively high voltage is constituted of a MOSFET having a relatively thick gate insulating film. A main control circuit and the circuits of a sense amplifier, main amplifier, etc., are operated by a drop voltage, and is constitutied of a MOSFET having a relatively thin gate insulating film corresponding to the voltage. |
