| 摘要 |
PROBLEM TO BE SOLVED: To enhance reliability in a data overwrite life span, by a method wherein an upper electrode formed on a ferroelectric film contains a lamination containing a conductive oxide layer of a metal connected to the ferroelectric film. SOLUTION: A ferroelectric capacity element contains a lower electrode 3, an upper electrode 5 and a ferroelectric film intervened therebetween. A contact hole through the upper electrode 5 is provided in a protection film, and the ferroelectric capacity element through the contact hole is electrically connected to a memory transistor via a wiring layer 10. A wiring layer 6 as a bit line and the wiring layer 10 connected to the upper electrode 5 has a structure of laminating a metal silicide layer such as tungsten silicide (WSix ) or the like, or a material composed mainly of aluminum or titanium nitride on the metal silicide layer. It is possible to restrict a deterioration of the ferroelectric capacity element by heating, after the wiring layer is formed due to the WSix as the metal silicide of the wiring layer 10. |
