| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile memory of contact-less array type which is capable of ensuring a bit line of an enough ON-state current without increasing resistance even if the bit line width is made very fine. SOLUTION: A non-volatile flash memory is equipped with an impurity diffusion layer 5 which is formed by implantation of arsenic ion to serve as a bit line. In this case, the impurity diffusion layer 5 has a region which is of impurity concentration 1×10<18> cm<-3> or above and of thickness (b) in a depthwise direction, and provided that a distance of the lateral diffusion of arsenic from the opening boundary of a mask used at the implantation of arsenic ions is represented by (a), (a) and (b) are so set as to satisfy a formula, a<b.
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