| 摘要 |
<p>In a method of manufacturing a semiconductor optical waveguide array in an ultra-high integration, the device yield per wafer is considerably increased and uniform and improved characteristics are obtained. In this method, there is manufactured a semiconductor optical waveguide array including a plurality of optical waveguides in an array structure in stripe-shaped growth regions enclosed by dielectric thin films on a substrate. The waveguides are fabricated through a selective crystal growth process and include a semiconductor multilayer structure including a quantum well layer or a semiconductor multilayer structure including a bulk layer. Namely, there is formed a plurality of stripe-shaped growth regions elongated parallel to each other, the regions being enclosed with a dielectric thin film. In each growth region, a semiconductor multilayer structure is selectively grown by metallo-organic vapor phase epitaxy (MOVPE). In the selective growth, the growth regions are parallel to each other with an interval therebetween, the interval being less than a diffusion length of a source material in a reactive tube during the crystal growth. Assuming that the dielectric thin film arranged between the respective growth regions has a width Wa and a first outer-most dielectric thin film and a second outer-most dielectric thin film arranged respectively outside of outer-most ones of the growth regions respectively have widths Wm1 and Wm2, there is satisfied a relationship of Wm1 > Wa and Wm2 > Wa. <IMAGE></p> |
