发明名称 |
High temperature ZrN and HfN IR scene projector pixels |
摘要 |
A structure and method of making resistive emitting members which exhibit high resistivity while at the same time providing high temperature operation significantly above that known in the art. Specifically the use of nitrides of Group IVB transition metals from the periodic table, exclusive of titanium is described.
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申请公布号 |
US5973383(A) |
申请公布日期 |
1999.10.26 |
申请号 |
US19980057734 |
申请日期 |
1998.04.09 |
申请人 |
HONEYWELL INC. |
发明人 |
COLE, BARRETT E.;HOLMEN, JAMES O.;GREENLAW, DAVID K. |
分类号 |
B41J2/335;(IPC1-7):B41J2/05 |
主分类号 |
B41J2/335 |
代理机构 |
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地址 |
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