| 摘要 |
PROBLEM TO BE SOLVED: To attain excellent film quality equal to that of a thermally oxidized film by introducing a hydrogen-containing gas in addition to a silicon-containing gas and an oxygen-containing gas and generating plasma containing hydrogen in a beating chamber. SOLUTION: A silicon oxidized film is deposited and film-formed on a substrate by a plasma CVD. SiH4 gas is supplied from a monosilane supply source 41 through a 1st gas pipe 33 and a shower head 32 and diffused above the substrate G in the treating chamber 12. Gaseous O2 and gaseous H2 are supplied through a 2nd gas supply pipe 35 and a shower head 34 from a gaseous O2 supply source 42 and a gaseous H2 supply source 43 to be diffused in the upper part of the treating chamber 13. After film forming at a prescribed gas pressure, a gas flow rate, a temp. and for prescribed time, the supply of SiH4 gas is stopped without stopping the plasma in the film forming and gaseous H2 is supplied from the 2nd gas supply pipe 35. As a result, H in the plasma and Si in the film-formed silicon oxidized film react with each other to accomplish an action to cover the defect in the film. |
