| 摘要 |
A high voltage integrated circuit is provided which includes a first conductivity type semiconductor substrate, a first conductivity type isolation region that extends continuously from the first conductivity type semiconductor substrate, a substrate electrode formed on a surface of the first conductivity type isolation region, a second conductivity type island-like region that is formed on the first conductivity type semiconductor substrate, such that the entire periphery of the island-like region is surrounded by the first conductity type isolation region, and a plurality of high voltage MOSFETs that are connected to a common power source and operate independently of each other.
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