发明名称 |
Method of fabricating semiconductor device |
摘要 |
Thin-film transistors (TFTs) having characteristics comparable to those of a single-crystal silicon wafer are provided. A buffer film made from silicon oxide is formed on a first amorphous silicon film. A nickel acetate solution containing a metal element such as nickel for promoting crystallization of silicon is applied to the first amorphous silicon film. The laminate is heat-treated to form a nickel silicide layer. The nickel silicide layer is then patterned. A second amorphous silicon film is formed and heat-treated to grow crystals. Thus, monodomain regions which can be regarded as single crystals are formed. Active layers of TFTs are formed from these monodomain regions.
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申请公布号 |
US5972105(A) |
申请公布日期 |
1999.10.26 |
申请号 |
US19950528407 |
申请日期 |
1995.09.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;KUSUMOTO, NAOTO;TERAMOTO, SATOSHI |
分类号 |
C30B1/02;H01L21/20;H01L21/336;H01L21/77;H01L21/84;(IPC1-7):C30B1/10 |
主分类号 |
C30B1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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