发明名称 Process for reducing the surface recombination speed in silicon
摘要 The reduction of surface recombination is required for the manufacture of electronic devices made of silicon as well as for the application of various measurements and analytical methods for determining the purity of silicon. According to this invention, a process will be described for applying a laquer layer to the surface of silicon wafers, wherby the surface recombination velocity will be reduced to a value below 100 cm/s.
申请公布号 US5972724(A) 申请公布日期 1999.10.26
申请号 US19950526556 申请日期 1995.09.12
申请人 TEMIC TELEFUNKEN MICROELECTRONIC GMBH 发明人 ARNDT, WOLFGANG;GRAFF, KLAUS;HAMBERGER, ALFONS;HEIM, PETRA
分类号 C30B33/00;H01L21/312;H01L21/316;H01L23/31;(IPC1-7):H01L21/02 主分类号 C30B33/00
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