| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method by a CVD process which has no limitation on shapes, decreases variations in film thickness and film structure, improves strength, thermal impact resistance and corrosion resistance and is capable of sufficiently improving a deposition rate. SOLUTION: A ceramic film is formed on a base material 4 of an arbitrary shape in a vapor deposition chamber 2 by installing this vapor deposition chamber 2 in a reaction furnace 1, surely reducing the volume of the vapor deposition chamber 2, directly introducing a gaseous raw material, relatively shortening the stagnation time of the gaseous raw material, facilitating the setting of the stagnation time, stagnating 3 to 15 vol.% of the gaseous raw material for 2 to 30 seconds in the vapor deposition chamber 2 at a reaction tap. of 1200 to 1700 deg.C under a reaction pressure of 50 to 760 Torr and controlling the deposition rate to 60 to 450μm/hr, by which the stagnation time may be shortened without raising the temp., the shortening of the stagnation time is made possible without increasing the amt. of the gaseous raw material to be supplied, the high deposition rate is maintained, the limitation on the shapes is eliminated, the variations in the film thickness and film structure are eliminated and the ceramic film having the excellent strength, corrosion resistance and thermal impact resistance is inexpensively obtd.
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