发明名称 |
Stacked capacitor semiconductor device |
摘要 |
A semiconductor device is made up of a substrate having a top surface, and a fin type capacitor having a first electrode including a first part which extends upwards from the substrate and a second part which extends approximately parallel to the top surface of the substrate from the first part. The second part is made up of at least one conductor layer.
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申请公布号 |
US5973349(A) |
申请公布日期 |
1999.10.26 |
申请号 |
US19960767325 |
申请日期 |
1996.12.16 |
申请人 |
FUJITSU LIMITED |
发明人 |
IKEMASU, SHINICHIRO;HASHIMOTO, KOUICHI |
分类号 |
H01L21/02;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L29/41;H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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