| 摘要 |
<p>A reaction chamber (10) for chemical vapor deposition of a material layer onto a substrate using a process gas comprises a chamber body (12) having an inner wall (16) which defines a process space (14) for containing a substrate, a lid (22) to effectively close the process space, and a planar showerhead (44) positioned inside the chamber body (12) for dispersing a process gas into the process space. A lower insulator plate (50) is positioned on one side of the showerhead (44) between the showerhead and the chamber body (12) for electrically insulating the showerhead from the chamber body, and an upper insulator plate (52) is positioned on the other side of the showerhead (44) between the showerhead and the chamber body (12) and lid for electrically insulating the showerhead from the chamber body and lid (22). A shelf (42) is provided in the inner wall of the chamber body, and the planar showerhead (44) and upper (52) and lower (54) insulator plates are arranged in a stacked formation and are positioned on the shelf (42) proximate the process space (14) for introducing a process gas to a substrate in the process space.</p> |
